ONO and Tunnel Oxide Characterization and Optimization for High Speed EEPROM Device. Jurnal Teknologi (Sciences & Engineering), [S. l.], v. 38, n. 1, p. 125–136, 2012. DOI: 10.11113/jt.v38.503. Disponível em: https://journals.utm.my/jurnalteknologi/article/view/503.. Acesso em: 6 dec. 2025.