EVOLUTION OF DISCRETE SEMICONDUCTOR COPPER WEDGE BOND IN BIASED TEMPERATURE HUMIDITY CHAMBER. Jurnal Teknologi (Sciences & Engineering), [S. l.], v. 84, n. 6-2, p. 127–133, 2022. DOI: 10.11113/jurnalteknologi.v84.19362. Disponível em: https://journals.utm.my/jurnalteknologi/article/view/19362.. Acesso em: 19 dec. 2024.