Optimisation of Process Parameters for Lower Leakage Current in 22 nm n-type MOSFET Device using Taguchi Method. Jurnal Teknologi, [S. l.], v. 68, n. 4, 2014. DOI: 10.11113/jt.v68.2987. Disponível em: https://journals.utm.my/jurnalteknologi/article/view/2987.. Acesso em: 6 may. 2024.