ONO and Tunnel Oxide Characterization and Optimization for High Speed EEPROM Device. Jurnal Teknologi, [S. l.], v. 38, n. 1, p. 125–136, 2012. DOI: 10.11113/jt.v38.503. Disponível em: https://journals.utm.my/jurnalteknologi/article/view/503.. Acesso em: 20 may. 2024.