GROWTH, OPTICAL AND STRUCTURAL CHARACTERIZATION OF InP NANOSTRUCTURES WITH In0.4Ga0.6P INSERTION LAYER

Authors

  • Soe Soe Han Semiconductor Device Research Laboratory, Department of Electrical Engineering, Chulalongkorn University
  • Somsak Panyakeow Semiconductor Device Research Laboratory, Department of Electrical Engineering, Chulalongkorn University
  • Somchai Ratanathammaphan Semiconductor Device Research Laboratory, Department of Electrical Engineering, Chulalongk
  • Akio Higo Research Center for Advanced Science and Technology, The University of Tokyo
  • Yunpeng Wang Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo
  • Momoko Deura Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo
  • Masakasu Sugiyama Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo
  • Yoshiaki Nakano Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo

DOI:

https://doi.org/10.11113/aej.v1.15292

Abstract

Quantum dots in InP/GaAs system were grown by low pressure MOVPE via the StranskiKrastanow growth mode. In order to control the dots diameter and improve the size uniformity and photoluminescence (PL) emission, the ternary In0.4Ga0.6P layers thickness (0-4) monolayers (MLs) were inserted. The growth of thin In0.4Ga0.6P insertion layers between In0.49Ga0.51P matrix and InP QD layers reduced the mean height and size fluctuation and significantly improved the uniformity of InP QDs. A higher QDs PL intensity, better uniformity and smaller QDs size had been achieved at 2 ML thickness InGaP insertion layer. The PL emission could be observed around 780 nm red spectral range. There was no blue-shift with increase of the In0.4Ga0.6P insertion layer thickness.

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Published

2011-12-22

Issue

Vol. 1 No. 2 (2011): June 2011 Part A

Section

Electrical and Electronic Engineering

How to Cite

GROWTH, OPTICAL AND STRUCTURAL CHARACTERIZATION OF InP NANOSTRUCTURES WITH In0.4Ga0.6P INSERTION LAYER. (2011). ASEAN Engineering Journal, 1(2), 69-75. https://doi.org/10.11113/aej.v1.15292