Diagnostic Thermoelectric Cooler Performance In Diode Pumped Solid State Laser

Authors

  • Noriah Bidin
  • Wan Aizuddin Wan Razali

DOI:

https://doi.org/10.11113/jt.v52.125

Abstract

Sistem penyejukan termoelektrik (TEC) amat penting untuk menstabilkan keluaran DPSS laser. Tujuan kajian ini adalah untuk mengenal pasti prestasi TEC bagi sistem DPSS laser. Laser diod (LD) berkuasa tinggi digunakan sebagai sumber pengepaman. Arus pengepaman diubah dan suhu bagi LD dan KTP dirakamkan. Arus ambang untuk DPSS laser beroperasi adalah 7 A. Suhu bagi LD didapati bertambah dengan cepat sebelum arus ambang dicapai. Kemudiannya berada dalam keadaan stabil pada suhu 25.4°C. Berbeza dengan hablur KTP yang mengalami tiga fasa sebelum mencapai suhu stabil. TEC berjaya mengawal suhu KTP laser pada suhu bilik iaitu 25.4°C selepas dipam dengan arus pengepaman yang lebih besar dari 18 A. Kata kunci: Penyejukan termoelektrik; DPSS Laser; laser diod; hablur KTP; suhu Thermoelectric cooler (TEC) system is important in order to stabilize the output of Diode Pumped Solid State Laser (DPSS) laser. The aim of this study is to diagnose the performance of TEC in DPSS system. High power diode laser (DL) driver was utilized as a pumping source. The current of the driver was verified and the temperature of the DL and KTP were measured. The threshold current for DPSS laser was obtained at 7 A. The temperature of diode laser was found drastically increase before threshold current. Beyond that point the temperature remained constant at 25.4°C. However in KTP crystal, three phases produced before achieving the same constant temperature of DL. Thus TEC was effectively controlled the temperature of KTP at ambient temperature of 25.4°C after diode laser was pumped with current greater than 18 A. Key words: Thermoelectric cooler; DPSS Laser; diode laser; KTP crystal; temperature

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Published

2012-01-20

Issue

Section

Science and Engineering

How to Cite

Diagnostic Thermoelectric Cooler Performance In Diode Pumped Solid State Laser. (2012). Jurnal Teknologi, 52(1), 95–102. https://doi.org/10.11113/jt.v52.125