Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethylsilane At Low Temperature

Authors

  • Abdul Manaf Hashim
  • Kanji Yasui

DOI:

https://doi.org/10.11113/jt.v50.163

Abstract

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Published

2012-01-20

Issue

Vol 50 (June 2009)

Section

Science and Engineering

License

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