Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethylsilane At Low Temperature

Authors

  • Abdul Manaf Hashim
  • Kanji Yasui

DOI:

https://doi.org/10.11113/jt.v50.163

Abstract

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Published

2012-01-20

Issue

Vol 50 (June 2009)

Section

Science and Engineering

License

Copyright of articles that appear in Jurnal Teknologi belongs exclusively to Penerbit Universiti Teknologi Malaysia (Penerbit UTM Press). This copyright covers the rights to reproduce the article, including reprints, electronic reproductions, or any other reproductions of similar nature.

How to Cite

Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethylsilane At Low Temperature. (2012). Jurnal Teknologi (Sciences & Engineering), 50(1), 13–21. https://doi.org/10.11113/jt.v50.163