Harmonic Responses In 2DEG AlGaAs/GaAs HEMT Devices Due To Plasma Wave Interactions

Abstract

Gelombang plasma adalah ayunan kepadatan elektron dalam ruang masa, dan di dalam submikro transistor kesan medan, frekuensi plasma khas, ωp, terletak dalam julat terahertz (THz) dan tidak melibatkan peralihan kuantum. Maka, ayunan THz dapat dikesan dan/atau dihasilkan dengan menggunakan ransangan gelombang plasma. Dalam kertas kerja ini, dapat dikaji kaitan gelombang plasma antara penghantaran gelombang plasma dalam saluran pendek transistor pergerakan elektron tinggi (high–electron–mobility transistor – HEMT) dan yang terpancar dari gelombang elektromagnet. Berdasarkan ekperimen, kami telah membuktikan pengesanan radiasi terahertz (THz) oleh AlGaAs /GaAs HEMT hingga harmonik ketiga dalam suhu bilik dan hasil resonan bertepatan dengan hasil kiraan. Kata kunci: Gelombang permukaan plasma; plasma hanyut; peranti THz; GaAs; HEMT Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, ωp, lie in the terahertz (THz) range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short–channel High–Electron–Mobility Transistor (HEMT) and that of the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results. Key words: Surface plasma waves; drift plasma; THz device, GaAs; HEMT