PHYSICAL PROPERTIES OF NOVEL α-Fe2O3/NiO HETEROSTRUCTURES THROUGH IMMERSION/ SOL–GEL SPIN COATING METHOD: DIFFERENT DEPOSITION NUMBERS OF NiO LAYER

Authors

  • N. Parimon ᵃNANO-ElecTronic Centre (NET), School of Electrical Engineering, College of Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia ᵇFaculty of Engineering, Universiti Malaysia Sabah, 88400 Kota Kinabalu, Sabah, Malaysia https://orcid.org/0000-0002-2150-7682
  • M. H. Mamat ᵃNANO-ElecTronic Centre (NET), School of Electrical Engineering, College of Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia ᶜNANO-SciTech Lab (NST), Center for Functional Materials and Nanotechnology, Institute of Science (IOS), Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia https://orcid.org/0000-0002-6640-2366
  • A. B. Suriani Nanotechnology Research Centre, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris (UPSI), 35900 Tanjung Malim, Perak, Malaysia
  • A. Mohamed Nanotechnology Research Centre, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris (UPSI), 35900 Tanjung Malim, Perak, Malaysia
  • M. K. Ahmad Microelectronic and Nanotechnology–Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia (UTHM), 86400 Batu Pahat, Johor, Malaysia
  • I. B. Shameem Banu School of Physical and Chemical Sciences, B.S. Abdur Rahman Crescent Institute of Science & Technology, Vandalur, Chennai 600 048, India
  • N. Vasimalai School of Physical and Chemical Sciences, B.S. Abdur Rahman Crescent Institute of Science & Technology, Vandalur, Chennai 600 048, India
  • M. Rusop ᵃNANO-ElecTronic Centre (NET), School of Electrical Engineering, College of Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia ᶜNANO-SciTech Lab (NST), Center for Functional Materials and Nanotechnology, Institute of Science (IOS), Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia

DOI:

https://doi.org/10.11113/jurnalteknologi.v83.16793

Keywords:

-Fe2O3/NiO heterostructure, immersion, sol–gel spin coating, sensor, solar cell

Abstract

The novel hematite (α-Fe2O3)/nickel oxide (NiO) heterostructures were grown on fluorine-doped tin oxide (FTO) coated glass substrates at various deposited NiO of 3, 5, and 7 layers. The heterostructures were successfully synthesized using the immersion and sol–gel spin coating methods for α-Fe2O3 and NiO films, respectively. The field emission scanning electron microscopy analysis showed that each sample of α-Fe2O3/NiO heterostructures has a unique surface morphology when deposited with different NiO layers. The X-ray diffraction pattern shows that the number of NiO layers affected the diffraction peaks. The NiO diffraction peak intensity at (111) plane increased when the deposition number of NiO layer was increased. The crystallite sizes of NiO were 35.4, 33.6, and 38.0 nm for 3-, 5-, and 7-layer NiO, respectively. The interplanar spacing, lattice parameter, and unit cell volume indicate NiO with 3-layer as the highest, while 5- and 7-layer had the same values. Meanwhile, the strain and stress values show the compressive strain and tensile stress, respectively. The optical properties reveal that the highest transmittance and the lowest absorbance percentages were recorded for a 3-layer NiO sample. In contrast, the lowest transmittance and the highest absorbance percentages were obtained for the sample with 5-layer NiO. Different thicknesses and morphologies of heterostructures explained these situations. In addition, each unique heterostructure of α-Fe2O3/NiO with high visible light absorption nature is perceived to reduce the bandgap energy and has the potential to be used in sensor and solar cell applications.

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Published

2021-08-01

Issue

Section

Science and Engineering

How to Cite

PHYSICAL PROPERTIES OF NOVEL α-Fe2O3/NiO HETEROSTRUCTURES THROUGH IMMERSION/ SOL–GEL SPIN COATING METHOD: DIFFERENT DEPOSITION NUMBERS OF NiO LAYER. (2021). Jurnal Teknologi (Sciences & Engineering), 83(5), 19-26. https://doi.org/10.11113/jurnalteknologi.v83.16793