Large Signal Model of Heterojunction Bipolar Transistor InP/InGaAs as an Optoelectronic Mixer
DOI:
https://doi.org/10.11113/jt.v67.2761Keywords:
Heterojunction bipolar transistor, optoelectronic mixer, InP/InGaAsAbstract
A large-signal model of InP/InGaAs single Heterojunction Bipolar Transistor (HBT) has been developed considering spectral performance and mixing. This model is based on Gummel Poon BJT model. HBT InP/InGaAs has been modeled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1310 nm for an up-conversion frequency of 30 GHz. Its characteristics was further investigated to develop the appropriate structure device for OEM application. This proposed HBT InP/InGaAs can be potentially implemented in the broadband Radio over Fiber (RoF) system to perform photodetection and frequency up-conversion.
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