THE EFFECTS OF TEMPERATURE ON DIFFERENT LASER TRANSITIONS OF NEODYMIUM ORTHOVANADATE CRYSTAL

Authors

  • Ganesan Krishnan Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Johor Bahru, Johor, Malaysia
  • Noriah Bidin Laser Center, Ibnu Sina Institute for Scientific and Industrial Research (ISI-SIR), Universiti Teknologi Malaysia, 81310 UTM Johor Bahru, Johor, Malaysia

DOI:

https://doi.org/10.11113/jt.v78.7483

Keywords:

Temperature effects, spectroscopic, laser crystals

Abstract

The temperature dependence of Nd:YVO4 laser crystal pumped by laser diode emitting at 808 nm is studied within the range of 5 oC to 60 oC. The spectroscopy properties of quasi three level at 914 nm (4F3/2 - 4I 9/2) and four level at 1064 nm (4F3/2 - 4I 11/2) are characterized. The lineshape function of the transition lines were broadened as the temperature increases. The phenomenon is attributed to change in linewidth, lineshift and intensity. The linewidths for both laser transition of 914 nm and 1064 nm increases with temperature with the rate of 0.105 cm-1/oC and 0.074 cm-1/oC respectively. The peak of 914nm and 1064 nm lineshapes shifted to a longer wavelength with the rate of 3.0 pm/oC and 4.2 pm/oC respectively which correspond to same amount of lineshift. The lineshape broadening with respect to the temperature is due to one-phonon emission and Raman phonon scattering processes.  The intensities of 914 nm and 1064 nm transition lines are found to be decreased at the rate of 0.15 %/oC and 0.45 %/oC respectively due to non-radiative effects. Quasi three level laser transition is more temperature dependent because it terminal level is close to the ground state which suffers from higher phonon-ion interaction rather than four level laser system.

References

Huber, G., Krankel, C. and Peterman K. 2010. Solid-state Lasers: Status and Future. Optical Society of America B. 27 (11): B93-B105.

Hecht, J. 2010. Short History of Laser Development. Optical Engineering. 49(9): 091002-091002.

Zhang, H., Chao, M., Gao, M., Zhang, L. and Yao, J. 2003. High Power Diode Single-end-pumped Nd:YVO4 Laser. Optics & Laser Technology. 35(6): 445-449.

Bai, J. and Chen, G. 2002. Continuous-wave Diode-laser end-pumped Nd:YVO4/KTP High-power Solid-state Green Laser. Optics & Laser Technology. 34(4): 333-336.

Quan, Z., Ling, Z., Ziqing, Y., Huiming, T. and Longsheng, Q. 2001. LD-pumped Passively Q-switched Nd:YVO4 Infrared and Green Lasers. Optics & Laser Technology. 33(5): 355-357.

Gong, W., Qi, Y. and Bi, Y. 2009. A Comparative Study of Continuous Laser Operation on the 4F3/2-4I9/2 Transitions of Nd:GdVO4 and Nd:YVO4 Crystals. Optics Communications. 282(5): 955-7.

Koechner, W. 2006. Solid-State Laser Engineering. 6th Revised and Updated Version. USA: Springer.

Didierjean, J., Forget, S., Chernais, S., Druon, F., Balembois, F., Georges, P., Altmann, K. and Pflaum, C. 2005. High Resolution Absolute Temperature Mapping of Laser Crystals in Diode-end-pumped Configuration. Proceeding SPIE. 5707: 370-379.

Didierjean, J., Herault, E., Balembois, F. and Georges, P. 2008. Thermal Conductivity Measurements of Laser Crystals by Infrared Thermography. Application to Nd:doped Crystals. Optics Express. 16(12): 8995-9010.

Bidin, N., Krishnan, G., Khamsan, N. E., Zainal, R. and Bakhtiar, H. 2012. Thermal Stress Effect in Diode End-pumped Nd: YVO4 Bar Laser. 2nd Asean-APCTP Workshop On Advanced Materials Science and Nanotechnology (AMSN 2010). AIP Publishing. 1455(1):191-194.

Krishnan, G. and Bidin, N. 2013. Determination of a Stimulated Emission Cross Section Gradient on the Basis of the Performance of a Diode-end-pumped Nd: YVO4 Laser. Laser Physics Letters. 10(5): 055007.

Krishnan, G., Bidin, N., Ahmad, M. F. S. and Abdullah, M. 2015. Stimulated Emission Cross Section at Various Temperatures Based on Laser Performance. Laser Physics Letters. 12(10): 105001.

Mingxin, Q., Booth, D. J., Baxter, G. W. and Bowkett, G. C. 1993. Performance of a Nd:YVO4 Microchip Laser with Continuous-wave Pumping at Wavelength between 741 nm and 825 nm. Applied Optics. 32: 2085-2086.

Sardar, D. K. and Yow, R. M. 2000. Stark Components of 4F3/2, 4I9/2 and 4I11/2 Manifold Energy Levels and Effects of Temperature on the Laser Transition of Nd3+ in YVO4. Optical Materials 2000. 14(1): 5-11.

Turri, G., Jenssen, H. P., Cornacchia, Tonelli M. and Bass M. 2009. Temperature-dependent Stimulated Emission Cross Section in Nd3+:YVO4 Crystals. Optical Society of America B. 26: 2084-2088.

Delen, X., Balembois, F. and Georges, P. 2011. Temperature Dependence of the Emission Cross-section of Nd:YVO4 Around 1064 nm and Consequences on Laser Operation. Optical society of America B. 28(5): 972-976.

Pavel N. 2010. Simultaneous Dual-wavelength Emission at 0.90 and 1.06 µm in Nd-doped Laser Crystals. Laser Physics. 20(1): 215-221.

Chen, X. and Di Bartolo, B. 1993. Phonon Effects on the Sharp Luminescence Lines of Nd3+ in Gd3Sc2Ga3O12 Garnet (GSGG). Journal of Luminescence. 54: 309-318.

Chen, X. and Di Bartolo, B. 1994. Temperature Dependence of Spectral Linewidths and Lineshifts of Nd3+ Ions in CaY2Mg2Ge3O12 Laser Crystal. Applied Physics. 75(3): 1710-1714.

Kushida, T. 1969. Linewidths and Thermal Shifts of Spectral Lines in Neodymium-doped Yttrium Aluminum Garnet and Calcium Fluorophosphates. Physical Review. 185: 500-508.

Kiel, A. 1962. Temperature-dependent Linewidth of Excited States in Crystals. I. Line Broadening due to Adiabatic Variation of the Local Field. Physical Review. 126: 1292-1297.

Sardar, D. K. and Yow, R. M. 1998. Optical Characterization of Inter-stark Energy Levels and Effects of Temperature on Sharp Emission Lines of Nd3+ in CaZn2Y2Ge3O12. Optical Materials. 10(3): 191-199.

Di Bartolo, B. 2010. Optical Interactions in Solids. 2nd edition. Singapore: World Scientific.

Laurendeau, N. M. 2005. Statistical Thermodynamics: Fundamentals and Applications. USA: Cambridge.

Downloads

Published

2016-02-21

Issue

Section

Science and Engineering

How to Cite

THE EFFECTS OF TEMPERATURE ON DIFFERENT LASER TRANSITIONS OF NEODYMIUM ORTHOVANADATE CRYSTAL. (2016). Jurnal Teknologi (Sciences & Engineering), 78(3). https://doi.org/10.11113/jt.v78.7483