INVESTIGATION OF FREQUENCY NOISE AND SPECTRUM LINEWIDTH IN SEMICONDUCTOR OPTICAL AMPLIFIER

Authors

  • Alexander William Setiawan Putra Malaysia Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Semarak, 54000 Kuala Lumpur, Malaysia
  • Kazuki Makinoshima Kanazawa University, Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology, Kakuma-machi, Kanazawa, Ishikawa Prefecture 920-1192, Japan
  • Minoru Yamada Kanazawa University, Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology, Kakuma-machi, Kanazawa, Ishikawa Prefecture 920-1192, Japan
  • Takayoshi Takashima Kanazawa University, Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology, Kakuma-machi, Kanazawa, Ishikawa Prefecture 920-1192, Japan
  • Sumiaty Ambran Malaysia Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Semarak, 54000 Kuala Lumpur, Malaysia

DOI:

https://doi.org/10.11113/jt.v78.7484

Keywords:

Optical fiber communication, semiconductor optical amplifier, noise, frequency noise, linewidth

Abstract

The characteristics of FM noise and linewidth of semiconductor optical amplifier without facet mirrors were theoretically analyzed and experimentally confirmed. The concept of discrete longitudinal mode for the spontaneous emission was introduced as the basis of quantum mechanical characteristics, allowing the quantitative examination of noise sources. The continuously broaden output spectrum profile of the amplified spontaneous emission (ASE) was well explained as a spectrum broadening of each longitudinal mode. We found that the linewidth of the inputted signal light hardly changes by the optical amplification in the SOA.  The FM noise increases proportional to square value of the noise frequency and less affected by the electron density fluctuation, the linewidth enhancement factor and the ASE. The higher FM noise in the higher noise frequency is caused by the intrinsic phase fluctuation on the optical emission. The characteristics of the linewidth and the noise frequency dependency were experimentally confirmed.  

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Published

2016-02-21

Issue

Vol. 78 No. 3: March 2016

Section

Science and Engineering

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Copyright of articles that appear in Jurnal Teknologi belongs exclusively to Penerbit Universiti Teknologi Malaysia (Penerbit UTM Press). This copyright covers the rights to reproduce the article, including reprints, electronic reproductions, or any other reproductions of similar nature.

How to Cite

INVESTIGATION OF FREQUENCY NOISE AND SPECTRUM LINEWIDTH IN SEMICONDUCTOR OPTICAL AMPLIFIER. (2016). Jurnal Teknologi, 78(3). https://doi.org/10.11113/jt.v78.7484