OPTIMIZED DISTANCE FOR NON-DAMAGING IN LASER CLEANING PREPARATION

Authors

  • Chong Hai Sin Infineon Tech Sdn Bhd. Free trade Zone, Batu Berendam Melaka
  • Mohd Aizat Abu Bakar Laser Center, Ibnu Sina Institute, Universiti Teknologi Malaysia
  • Daing Farhana Hanum Abd. Munap Physics Department, Faculty Science, Universiti Teknologi Malaysia
  • Ganesan Krishnan Laser Center, Ibnu Sina Institute, Universiti Teknologi Malaysia
  • Noriah Bidin Laser Center, Ibnu Sina Institute, Universiti Teknologi Malaysia

DOI:

https://doi.org/10.11113/jt.v78.7505

Keywords:

Damage, Nd, YAG laser, breakdown, optimization, distance, depth

Abstract

Laser Technology has wide application in industry as well as in scientific research. Semiconductor industry also interested to use laser for cleaning contaminant. However, until today, no laser has been deployed to take over the traditional method due to lack of intension on it. As a first step to embark into industrial solution, initiative has been carried out to do fundamental experiment. Optimization has been established to find out the best position for cleaning without associated with damage. A Q-switched Nd:YAG laser was focused to create breakdown in the air. This is an indicator for plasma formation and shock wave generation as the main mechanisms of damage. Pure aluminium was used as a substrate and mounted on précised a 3D linear translational stage.  The defocused distance was varied in the range of 0-25 mm. The damage image was recorded and analysed via the aid of ImageJ software. Small and deep dense deformation was observed as the target located at the focal point. As the defocused distance move further away, the damage tend to be eliminated and its depth approaching the same level as original.  

References

Ohmi, T. 1996. Total Room Temperature Wet Cleaning of Silicon Surfaces. Semiconductor International. 19(8): 323-338.

Hattori, T. Osaka T., Okamoto, A. Saga, K. and Kuniyasu, H. 1998. Contamination Removal by Single-Wafer Cleaning with Repetitive Use of Ozonated Wafer and Dilute HF. J. Electrochem. Soc. 145(9): 3278-3284.

Uemura, K. Mori, Y., Haibara, T. 2001. Cleaning Technology Silicon Wafer. Nipon Steel Technical Report. 83: 61-68.

Abejon, R., Garea, A. Irabien, A. 2010. Ultrapurification Of Hydrogen Peroxide Solution From Ionic Metals Impurities To Semiconductor Grade By Reverse Osmosis. Separation and Purification Technology. 76: 44-51.

Abejon, R., Garea, A., Irabien, A. 2012. Analysis, Modelling And Simulation Of Hydrogen Peroxideultrapurification by Multistage Reverse Osmosis. Chemical Engineering Research And Design. 90(3): 442-452.

Robert, H. Pagliaro, Jr., Mesa, A. Z. 2014. Silicon Surface Preparation. United States Patent. No.: US 8,765,606 B2.

Braha, D. and Shmilovici, A. 2001. Data Mining for Improving a Cleaning Process in the Semiconductor Industry. IEEE Transactions On Semiconductor Manufacturing. 15(1): 91-101.

Nelson, S. L., 1997. The Effect of Oxygen Passivation of Silicon by Wet Cleaning Processes on Contamination and Defects. Proceedings of the Electrochemical Society. Pennington, NJ: Electrochemical Society. 35: 38-45.

Bergman, E., and Lagrange, S. 2001. HF-Ozone Cleaning Chemistry. Solid State Technology. 46(7): 115-124.

Heyns, M., Meuris, M. and Paul Mertens, P. 1999. Particle Removal Efficiency and Silicon Roughness in HF-DIW/O3/Megasonics Cleaning. Solid State Phenomena. 65-66: 27-30.

Zhang, J., Birnbaum, A. J., Yao, Y. L., Xu, F., Lombardi, J. R. 2008. Mechanism and Prediction of Laser Wet Cleaning of Marble Encrustation. Journal of Manufacturing Science and Engineering. 130: 031012.

DeJule, R. 1998. CMP Challenges below a Quarter Micron. Semiconductor International. 56-64.

Yue, L., Z. Wang, Z., Guo Wand Lin Li L. 2012. Axial Laser Beam Cleaning Of Tiny Particles On Narrow Slot Sidewalls. J. Phys. D: Appl. Phys. 45: 365106.

Vereecke, G., Rohr, E., Heyns, M. 1999. Laser-Assisted Removal of Particles on Silicon Wafers. J. Appl. Phys. 85: 3837.

Busnaina, A. A., Park, J. G., Lee, J. M., You, S. Y. 2003. Laser Shock Cleaning of Inorganic Micro and Nanoscale Particles. The 14th Semiconductor Manufacturing Conference (ASMC) March 31 – April 1, Munich, Germany: 41-45.

Curran, C., Watkins, K. G., Lee, J. M. 2002. Ultravolet Laser Removal Of Small Metallic Particles Fromsilicon Wafers. Optics and Lasers in Engineering. 38: 405-415.

N. Bidin, R. Qindeel, M. Y. Daud, and K. A. Bhatti. 2007. Plasma Splashing from Al. and Cu Materials Induced by an Nd: YAG Pulsed Laser. Laser Physics. 17(10): 1222-1228.

Rabia Qindeel, Noriah Bidin, and Yaacob Mat Daud. 2007. IR Laser Plasma Interaction with Glass. American Journal of Applied Sciences. 4(12): 1009-1015.

Alwafi, Y. Bidin N., Riban G. D., Harun. S. W. 2012. Alloying Aluminum with Fe Using Laser Induced Plasma Technique. Laser Physics. 22(8): 1364-1367.

Bidin, N., Abdullah, M., Shaharin, M. S., Al-Wafi, Y., Riban, D. G, and Yasin, M. 2013. Optimization of Super Lateral Energy In Laser Surface Alloying Aluminium. Laser Phys. Lett. 10: 106001.

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Published

2016-02-21

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Section

Science and Engineering

How to Cite

OPTIMIZED DISTANCE FOR NON-DAMAGING IN LASER CLEANING PREPARATION. (2016). Jurnal Teknologi (Sciences & Engineering), 78(3). https://doi.org/10.11113/jt.v78.7505