Large Signal Model of Heterojunction Bipolar Transistor InP/InGaAs as an Optoelectronic Mixer. Jurnal Teknologi (Sciences & Engineering), [S. l.], v. 67, n. 3, 2015. DOI: 10.11113/jt.v67.2761. Disponível em: https://journals.utm.my/jurnalteknologi/article/view/2761.. Acesso em: 30 apr. 2025.