Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethylsilane At Low Temperature. Jurnal Teknologi, [S. l.], v. 50, n. 1, p. 13–21, 2012. DOI: 10.11113/jt.v50.163. Disponível em: https://journals.utm.my/jurnalteknologi/article/view/163.. Acesso em: 23 jul. 2024.