“Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethylsilane At Low Temperature”. Jurnal Teknologi (Sciences & Engineering) 50, no. 1 (January 20, 2012): 13–21. Accessed September 13, 2026. https://journals.utm.my/jurnalteknologi/article/view/163.