Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethylsilane At Low Temperature. J. Teknol. [Internet]. 2012 Jan. 20 [cited 2026 Sep. 13];50(1):13–21. Available from: https://journals.utm.my/jurnalteknologi/article/view/163