INVESTIGATION ON PHYSICAL AND OPTICAL PROPERTIES OF THE SNO2-MGO NANO-COMPOSITE AT DIFFERENT COMPOSITIONS MIXINGS

Authors

  • E. Rani Physics Department, Maulana Malik Ibrahim Islamic State University of Malang, Indonesia
  • E. Hastuti Physics Department, Maulana Malik Ibrahim Islamic State University of Malang, Indonesia
  • L. N. Fitriya Physics Department, Maulana Malik Ibrahim Islamic State University of Malang, Indonesia
  • L. S. Ningtyas Physics Department, Maulana Malik Ibrahim Islamic State University of Malang, Indonesia

DOI:

https://doi.org/10.11113/jt.v78.8332

Keywords:

Optical band gap energy, extinction coefficient, transmittance

Abstract

SnO2­ is semiconductor material widely used such as in transparent conducting oxide (TCOs), solar cell, electronic devices and sensors. MgO is a material widely used as absorber. This paper investigated physical and optical properties of SnO2-MgOnanocomposite at different composition mixings. SnO2 and MgO nanoparticlewere prepared and synthesized with simple mixing method. The composition mixing ratio of SnO2-MgO were 0:10; 3:7; 5:5; 7:3; and 10:0 (%wt). It was proven than the SnO2-MgOmixings able to improve absorbance value especially for variation mixing of 3SnO2: 7 MgO. It was obtained the highest absorbance in the range of 0.7-1.5 a.uat visible spectra. On the contrary its transmittance attained the lowest comparing to other samples. The optical band-gap energy for indirect transition was the lowest in amount of 4.37-5.58eV. Its extinction coefficient tended to decline with the increasing wavelength. At this compositions mixing, extinction coefficient reached the highest. In addition MgSnO3 and Mg2SnO4 phase was detected as new phase with the lowest grain size (17.82274 nm). It can be said that the variation mixing of 3SnO2: 7MgO can be a good absorber.

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Published

2016-04-18

Issue

Section

Science and Engineering

How to Cite

INVESTIGATION ON PHYSICAL AND OPTICAL PROPERTIES OF THE SNO2-MGO NANO-COMPOSITE AT DIFFERENT COMPOSITIONS MIXINGS. (2016). Jurnal Teknologi, 78(5). https://doi.org/10.11113/jt.v78.8332