A VERY LOW-DROPOUT VOLTAGE REGULATOR IN 0.18-M CMOS TECHNOLOGY FOR POWER MANAGEMENT SYSTEM

Authors

  • Sohiful Anuar Zainol Murad aAdvanced Communication Engineering, Centre of Excellence (CoE), Universiti Malaysia Perlis (UniMAP), Perlis, Malaysia bFaculty of Electronic Engineering Technology, Universiti Malaysia Perlis (UniMAP), Perlis, Malaysia
  • Azizi Harun Faculty of Electronic Engineering Technology, Universiti Malaysia Perlis (UniMAP), Perlis, Malaysia
  • Mohd Nazrin Md Isa Faculty of Electronic Engineering Technology, Universiti Malaysia Perlis (UniMAP), Perlis, Malaysia
  • Saiful Nizam Mohyar Faculty of Electronic Engineering Technology, Universiti Malaysia Perlis (UniMAP), Perlis, Malaysia
  • Jamilah Karim Faculty of Electrical Engineering, Universiti Teknologi MARA, 42300 Shah Alam, Selangor, Malaysia

DOI:

https://doi.org/10.11113/jurnalteknologi.v82.15031

Abstract

This paper proposes the design of a very low-dropout (LDO) voltage regulator in 0.18-mm CMOS technology. The proposed LDO regulator consists of voltage reference, symmetrical operational transconductance amplifier (OTA), PMOS transistor, resistive feedback network and output capacitor. The NMOS symmetrical OTA is implemented as an error amplifier and a PMOS transistor is employed as a pass device to improve gain and minimize low dropout voltage, respectively. The proposed design is simulated using Spectre simulator in Cadence software to verify its regulator performance. The simulation results show that the proposed LDO is capable to operate from a supply voltage of 1.7-2.0 V with a low dropout voltage of 19.3 mV at a maximum 50 mA load current to regulate output voltage 1.5 V. The active chip is 2.96 mm2 in size. The performance of the proposed LDO is suitable to enhance power management for system on chip (SoC) applications.  

Downloads

Published

2020-10-21

Issue

Section

Science and Engineering

How to Cite

A VERY LOW-DROPOUT VOLTAGE REGULATOR IN 0.18-M CMOS TECHNOLOGY FOR POWER MANAGEMENT SYSTEM. (2020). Jurnal Teknologi (Sciences & Engineering), 82(6), 11-19. https://doi.org/10.11113/jurnalteknologi.v82.15031